2012. 7. 12 1/7 semiconductor technical data KF3N60D/i n channel mos field effect transistor revision no : 1 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for electronic ballast and switching mode power supplies. features h v dss = 600v, i d = 2.3a h drain-source on resistance : r ds(on) =3.3 ? @v gs = 10v h qg(typ) = 8.5nc maximum rating (ta=25 ? ) * : drain current limited by maximum junction temperature. characteristic symbol rating unit drain-source voltage v dss 600 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 2.3 a @t c =100 ? 1.46 pulsed (note1) i dp 7* single pulsed avalanche energy(note 2) e as 120 mj repetitive avalanche energy(note 1) e ar 3.2 mj peak diode recovery dv/dt(note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 44.6 w derate above 25 ? 0.34 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 2.8 ? /w thermal resistance, junction-to-ambient r thja 110 ? /w g d s pin connection dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max0.90 max e e m n h 0.70 min o 0.1 max n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j o 1. gate2. drain 3. source ipak(1) 123 a b c d e ff g h j l p m n k a bc d e f gh j l 0.96 max k m n p 6.6 0.2 + _ 6.1 0.2 + _ 5.34 0.3 + _ 0.7 0.2 + _ 9.3 0.3 + _ 2.3 0.2 + _ 0.76 0.1 + _ 2.3 0.1 + _ 0.5 0.1 + _ 1.8 0.2 + _ 0.5 0.1 + _ 1.0 0.1 + _ + _ 1.02 0.3 dim millimeters 1. gate2. drain 3. source KF3N60Dkf3n60i downloaded from: http:///
2012. 7. 12 2/7 KF3N60D/i revision no : 1 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 u , v gs =0v 600 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 u , referenced to 25 ? - 0.61 - v/ ? drain cut-off current i dss v ds =600v, v gs =0v, - - 10 u gate threshold voltage v th v ds =v gs , i d =250 u 2.5 - 4.5 v gate leakage current i gss v gs = ? 30v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =1.15a - 2.8 3.3 ? dynamic total gate charge q g v ds =480v, i d =3a v gs =10v (note4,5) - 8.5 - nc gate-source charge q gs - 1.8 - gate-drain charge q gd - 3.6 - turn-on delay time t d(on) v dd =300v i d =3a r g =25 ? (note4,5) - 25 - ns turn-on rise time t r - 25 - turn-off delay time t d(off) - 40 - turn-off fall time t f - 20 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 355 - pf output capacitance c oss - 45 - reverse transfer capacitance c rss - 4.4 - source-drain diode ratings continuous source current i s v gs 2012. 7. 12 3/7 KF3N60D/i revision no : 1 downloaded from: http:///
2012. 7. 12 4/7 KF3N60D/i revision no : 1 downloaded from: http:///
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